英语翻译Introduction of dopant atoms on lattice sites to make asolid solution alloy can be effective in scattering mainly shortwavelength phonons,and this was the conventional strategy forseveral decades in the thermoelectric eld which ga

英语翻译Introduction of dopant atoms on lattice sites to make asolid solution alloy can be effective in scattering mainly shortwavelength phonons,and this was the conventional strategy forseveral decades in the thermoelectric eld which ga
英语翻译
Introduction of dopant atoms on lattice sites to make a
solid solution alloy can be effective in scattering mainly short
wavelength phonons,and this was the conventional strategy for
several decades in the thermoelectric eld which gave rise to the
rst generation thermoelectric materials mentioned above.
Point defects scatter short MFP phonons due to either mass
contrast or local bond strain induced by the defects.33 The
scattering of medium MFP phonons is best achieved through
nanostructuring.Such scattering is believed to be occurring at
the interfaces between the precipitates and the matrix and from
the mass contrast between the two phases.For the scattering of
long wavelength phonons,samples are mainly prepared by
breaking down the crystals to mesoscopic particles in the range
of 100 nm to 5 mm.This is followed by sintering of the negrained
powders and therefore boundary scattering can occur
at the intergrain region.The propagation of phonons with long
MFP can be limited by the nite size in a given grain.58 Thus,
meso-scale grain boundaries mostly scatter the long wavelength
phonons.Parrott has calculated that an increase in thermal
resistance of about 9% occurs due to grain boundary scattering
for a Si–Ge alloy of grain size with a linear dimension of 40 mm,
which becomes 26% for a linear dimension of 4 mm.59 Indeed,
this calculation was later experimentally conrmed.58,60

英语翻译Introduction of dopant atoms on lattice sites to make asolid solution alloy can be effective in scattering mainly shortwavelength phonons,and this was the conventional strategy forseveral decades in the thermoelectric eld which ga
人工翻译,
在晶格位置上引入掺杂剂原子来制造固态溶液合金,在主要驱散短波长声子方面是有效的,并且这在几十年中就是热电材料（eld）常规的策略,这种策略产生了上面提到的第一代热电材料.点缺陷由于质量反差或缺陷引起的局部结合应变而使短MFP声子分散.33中MFP声子的分散最好是通过纳米结构来实现.这样的分散据信是在析出物和基体之间的界面处发生的.对于长波长声子的分散来说,样品主要是通过将晶体击碎成100nm至5mm范围的介观颗粒来制备的.这之后是将晶粒状（negrained）的粉末烧结,因此,在晶粒间区域会发生边界分散.具有长MFP的声子的传播可以通过给定晶粒的（nite）尺寸来限制.58因此,中尺度的晶粒边界大多驱散长波长的声子.帕洛特已经计算过,对于晶粒尺寸为40mm线性尺寸的Si-Ge合金来说,由于晶粒边界分散会发生约9％的热阻增加,这对于4mm的线性尺寸的线性尺寸来说就变成了26%的增加.59事实上,这一计算后来被实验证实了.58,60

比较专业，无法解读，抱歉

掺杂原子晶格中作一介绍
固溶合金可以在散射主要短期有效
波长声子，这是传统的策略
在热电领域引起了几十年
第一代热电材料上面提到的。
点缺陷的声子散射短MFP由于质量
对比度和局部粘结应变诱导的defects.33
介质声子散射MFP是最好的实现
纳米结构。这种散射被认为是发生在
接口的析出物和...

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掺杂原子晶格中作一介绍
固溶合金可以在散射主要短期有效
波长声子，这是传统的策略
在热电领域引起了几十年
第一代热电材料上面提到的。
点缺陷的声子散射短MFP由于质量
对比度和局部粘结应变诱导的defects.33
介质声子散射MFP是最好的实现
纳米结构。这种散射被认为是发生在
接口的析出物和基质之间
这两个阶段之间的质量对比。的散射
长波长声子，样品主要由
打破晶体范围在介观粒子
100 nm到5毫米。这是其次是烧结的negrained
可发生粉末和因此边界散射
在晶粒间的区域。声子与长的传播
多功能一体机可以在一个给定的grain.58这样的有限大小的限制，
中尺度晶界主要散射长波
声子。帕罗特计算热增加
电阻约9%的发生是由于晶界散射
一个四–锗合金的晶粒尺寸为40毫米的线性尺寸，
这是26%的4 mm.59线性尺寸的确，
这个计算是后来的实验条件下。58、60
大概的翻译 好多专业名词

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